| Title |
Properties of Annealing Temperature of Ceramic Thin Film by RF Sputtering Method |
| Keywords |
Thin Film ; Annealing ; Dielectric Constant ; Capacitance |
| Abstract |
The SBN thin films were deposited at substrate temperature of 300[^{\circ}C] on Pt-coated electrode (Pt/Ti/SiO_2/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[^{\circ}C]. The voltage dependence of dielectric loss showed a value within 0.01 in voltage ranges of -5~+5[V]. The capacitance characteristics showed a stable value of about 0.7[{\mu}F/cm^2]. |