| Title |
Optical and Electrical Property of \beta-Phases In_2Te_3 Single Crystal by Vertical Bridgman Method |
| Authors |
김남오(Kim, Nam-Oh) ; 이강연(Lee, Kang-Yeon) ; 정병호(Jeong, Byeong-Ho) ; 최연옥(Choi, Youn-Ok) ; 신화영(Shin, Hwa-Young) ; 조금배(Cho, Geum-Bae) |
| Keywords |
Raman Spectra ; Activation Energy ; Lattice Constants ; Vertical Bridgman Method ; \beta-In_2Te_3 Single Crystal |
| Abstract |
The \beta-In_2Te_3 single crystal was grown by vertical Bridgman method. The \beta-In_2Te_3 single crystal had a face centered cubic(fcc) structure. The lattice constants were found to be a\;=\;0.617\;{\AA}. The direct optical energy gap (E_g) was found to be 1.11 ev at 300 K. Raman spectra peak of \beta-In_2Te_3 single crystal showed the low E_{LO} mode at 105\;cm^{-1}. The electrical conduction type was measured by the thermal method and was p-type. The electrical conductivity was found to be 1.8\;×\;10^{-2}\;{\Omega}^{-1}cm^{-1} at 300 K. The activation energy was found to be 0.51 eV. |